A Mask-to-wafer Fine Gap Setting Method.
نویسندگان
چکیده
منابع مشابه
VERY DEEP TRENCHES IN SILICON WAFER USING DRIE METHOD WITH ALUMINUM MASK
Abstract: In this paper, a DRIE process for fabricating MEMS silicon trenches with a depth of more than 250 m is described. The DRIE was produced in oxygen-added sulfur hexafluoride (SF6) plasma, with sample cooling to cryogenic temperature using a Plasmalab System 100 ICP 180 at different RF powers. A series of experiments were performed to determine the etch rate and selectivity of the some m...
متن کاملMachine learning for mask/wafer hotspot detection and mask synthesis
Machine learning is a powerful computer science technique that can derive knowledge from big data and make predictions/decisions. Since nanometer integrated circuits (IC) and manufacturing have extremely high complexity and gigantic data, there is great opportunity to apply and adapt various machine learning techniques in IC physical design and verification. This paper will first give an introd...
متن کاملWafer-level and Mask Critical Dimension Metrology
The principal productivity driver for the semiconductor manufacturing industry has been the ability to shrink linear dimensions. A key element of lithography is the ability to create reproducible undistorted images, both for masks and the images projected by these masks onto semiconductor structures. Lithography as a whole, fabricating the masks, printing and developing the images, and measurin...
متن کاملMethodology to analyse small silicon samples by glow discharge mass spectrometry using a thin wafer mask
Glow discharge mass spectrometry (GDMS) is widely used for trace element analysis of bulk solid samples. The geometry of the GD source limits the minimum size of the sample, which for the instrument used in this work (ThermoElementGD) is 20 mm in diameter. From time to time, there is the need to analyse smaller samples with this technique, and we present here a methodology to analyse samples of...
متن کاملImpact of Mask Roughness on Wafer Line-Edge Roughness
The influence of line-edge roughness (LER) of an optical photomask on the resulting printed wafer LER is investigated. The LER Transfer function (LTF) proposed by Naulleau and Gallatin, and later corrected by Tanabe, is shown to be a very useful tool for evaluating the low-pass filtering behavior of the imaging tool and its impact on the transfer of mask LER to the wafer. Highfrequency mask LER...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of the Japan Society for Precision Engineering
سال: 1993
ISSN: 1882-675X,0912-0289
DOI: 10.2493/jjspe.59.2067